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Journal of Materials Science

, Volume 29, Issue 16, pp 4238–4243 | Cite as

The effects of Ge content on the microstructure and specific contact resistance of solid-state NiAuGe/ZrB2/Au ohmic contacts to n-InGaAs

  • J. S. Yu
  • A. E. Staton-Bevan
  • J. Herniman
  • D. A. Allan
Papers
  • 44 Downloads

Abstract

The Ge thickness, x, of NiAuGe(5 nm/45 nm/xnm)/ZrB2(50 nm)/Au(20 nm) ohmic contacts to n-lnGaAs was varied between 0 and 20 nm. The microstructures of these contacts, after annealing at 270°C, were investigated using transmission electron microscopy (TEM) and correlated with the respective specific contact resistances. In the absence of Ge, a Ni-Ga-As phase was formed at the metal-semiconductor interface and the specific contact resistance was high (0.63 Ωmm). When thicknesses of x = 10 nm or x = 15 nm of Ge were added, Ni-Ge-As phases were observed, but they were replaced by AuGeAs and NiGe when x = 20 nm. The specific contact resistance was a minimum (0.11 Ωmm) for this composition. Ge was clearly beneficial for ohmic-contact formation. The low-temperature I–V characteristics of the contact containing the largest amount of Ge (that is, x = 20 nm) indicated that electron tunnelling through degenerately-Ge-doped regions was not the dominant ohmic mechanism in these contacts.

Keywords

Polymer Microstructure Microscopy Electron Microscopy Transmission Electron Microscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • J. S. Yu
    • 1
  • A. E. Staton-Bevan
    • 1
  • J. Herniman
    • 2
  • D. A. Allan
    • 2
  1. 1.Department of Materials, Imperial College of Science, Technology and MedicineUniversity of LondonLondonUK
  2. 2.British Telecom LaboratoriesMartlesham HeathIpswichUK

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