Journal of Materials Science

, Volume 28, Issue 4, pp 994–998 | Cite as

Preparation of FeNx-TiN films by CVD

  • Hiroshi Funakubo
  • Nobuyasu Mizutani
  • Tetsuo Tatsuno


FeNx-TiN films were prepared on fused silica substrates by chemical vapour deposition from the gas mixture of Fe(C5H5)2, TiCl4, NH3 and H2 as starting materials under atmospheric pressure. FeNx-TiN films were deposited above 500°C and the constituent phase was a mixed phase of FeNx and TiN. The composition, deposition rate and saturation magnetization of FeNx-TiN films deposited at 750°C were in good agreement with the estimation made by assuming that FeNx and TiN phases were independently deposited.


Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour 
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Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • Hiroshi Funakubo
    • 1
  • Nobuyasu Mizutani
    • 1
  • Tetsuo Tatsuno
    • 2
  1. 1.Department of Inorganic Materials, Faculty of EngineeringTokyo Institute of TechnologyTokyoJapan
  2. 2.Electronic Material DivisionTaiyo Yuden Co.LtdGunmaJapan

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