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Journal of Materials Science

, Volume 28, Issue 4, pp 994–998 | Cite as

Preparation of FeNx-TiN films by CVD

  • Hiroshi Funakubo
  • Nobuyasu Mizutani
  • Tetsuo Tatsuno
Papers
  • 39 Downloads

Abstract

FeNx-TiN films were prepared on fused silica substrates by chemical vapour deposition from the gas mixture of Fe(C5H5)2, TiCl4, NH3 and H2 as starting materials under atmospheric pressure. FeNx-TiN films were deposited above 500°C and the constituent phase was a mixed phase of FeNx and TiN. The composition, deposition rate and saturation magnetization of FeNx-TiN films deposited at 750°C were in good agreement with the estimation made by assuming that FeNx and TiN phases were independently deposited.

Keywords

Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • Hiroshi Funakubo
    • 1
  • Nobuyasu Mizutani
    • 1
  • Tetsuo Tatsuno
    • 2
  1. 1.Department of Inorganic Materials, Faculty of EngineeringTokyo Institute of TechnologyTokyoJapan
  2. 2.Electronic Material DivisionTaiyo Yuden Co.LtdGunmaJapan

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