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Journal of Materials Science

, Volume 29, Issue 17, pp 4554–4558 | Cite as

Near surface modification of silica structure induced by chemical/mechanical polishing

  • J. A. Trogolo
  • K. Rajan
Papers

Abstract

Planarization of dielectric materials in multilevel devices has become an important topic in recent years. Planarization achieved through chemical/mechanical polishing (CMP) is the foremost of the techniques available to provide an appropriate low-topography surface for accurate lithography. In this study the effects of the planarization process on deposited SiO2 films, a material to which CMP is frequently applied, have been examined. The analysis, completed using transmission electron microscopy and Fourier-transform infrared spectroscopy, revealed evidence of chemical/structural modification of the SiO2 to 100–200 nm from the polished surface and more heavily altered or deformed regions extending to a few tens of nm in depth.

Keywords

Polymer Spectroscopy Microscopy Electron Microscopy SiO2 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • J. A. Trogolo
    • 1
  • K. Rajan
    • 1
  1. 1.Materials Engineering DepartmentRensselaer Polytechnic InstituteTroyUSA

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