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Journal of Materials Science

, Volume 30, Issue 6, pp 1500–1510 | Cite as

Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates

  • D. Lespiaux
  • F. Langlais
  • R. Naslain
  • S. Schamm
  • J. Sevely
Papers

Abstract

In the CH3SiCl3-H2 CVD system, from which SiC-based films are prepared, the supersaturation of the gas phase increases when temperature and total pressure decreases and when a diffusion-controlled kinetic process is changed in a reaction-controlled one. These conditions variations seem to induce a transition from a growth regime to a nucleation regime, as evidenced by a study of the initial stages of the deposition. A transition from a crystallized film with columnar crystals to a nanocrystalline deposit is also reported on the basis of accurate experiments using TEM and related techniques.

Keywords

Carbide Silicon Carbide Supersaturation Total Pressure Kinetic Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • D. Lespiaux
    • 1
  • F. Langlais
    • 1
  • R. Naslain
    • 1
  • S. Schamm
    • 2
  • J. Sevely
    • 2
  1. 1.Laboratoire des Composites ThermostructurauxUMR 47 CRNS-SEP-UB1 Domaine UniversitairePessacFrance
  2. 2.Centre d'Elaboration de Matériaux et d'Etudes StructuralesLaboratoire d'Optique ElectroniqueToulouse CedexFrance

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