Preparation and electrical properties of ITO thin films by dip-coating process
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Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 ∼ 20 mol% SnO2 were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO2 content. The ITO thin films containing 12 mol% SnO2 showed the minimum resistivity of ρ=1.2 × 10−3 (Ω cm). It also showed high carrier concentration of N=1.2 × 1020(cm−3) and mobility μH=7.0(cm2 V−1 s−1).
KeywordsSnO2 Electrical Resistivity Carrier Concentration Acetylacetone Quartz Glass
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- 7.S. Ogihara, K. Kinugawa and M. Nakayama, The Chem. Soc. Jpn. 9 (1980) 1345.Google Scholar
- 10.ASTM card 6-0416.Google Scholar
- 12.J. Gardeen, F. J. Blatt and L. J. Hall, Photoconductivity Conference, 1954 (John Wiley & Sons, Inc., New York, 1956) p. 146.Google Scholar
- 14.T. Haranou and S. Takagi, Hyoumengijyutu 40 (1989) 52.Google Scholar