Journal of Materials Science

, Volume 31, Issue 7, pp 1761–1766 | Cite as

Preparation and electrical properties of ITO thin films by dip-coating process

  • Keishi Nishio
  • Tadanori Sei
  • Toshio Tsuchiya


Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 ∼ 20 mol% SnO2 were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO2 content. The ITO thin films containing 12 mol% SnO2 showed the minimum resistivity of ρ=1.2 × 10−3 (Ω cm). It also showed high carrier concentration of N=1.2 × 1020(cm−3) and mobility μH=7.0(cm2 V−1 s−1).


SnO2 Electrical Resistivity Carrier Concentration Acetylacetone Quartz Glass 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    T. Suzuki, J. Mater. Sci. Lett. 7 (1988) 79.CrossRefGoogle Scholar
  2. 2.
    Idem, ibid.,6 (1987) 1086.CrossRefGoogle Scholar
  3. 3.
    G. Frank, Thin Solid Films 77 (1981) 107.CrossRefGoogle Scholar
  4. 4.
    N. Srinivasa Murty, ibid.92 (1982) 347.CrossRefGoogle Scholar
  5. 5.
    S. Sakka, J. Non-Cryst. Solids 73 (1985) 651.CrossRefGoogle Scholar
  6. 6.
    H. Uchihashi, N. Touge and T. Minami, J. Ceram. Soc. Jpn. 97 (1989) 396.CrossRefGoogle Scholar
  7. 7.
    S. Ogihara, K. Kinugawa and M. Nakayama, The Chem. Soc. Jpn. 9 (1980) 1345.Google Scholar
  8. 8.
    G. L. Pearson and J. Bardeen, Phys. Rev. 75 (1949) 865.CrossRefGoogle Scholar
  9. 9.
    R. L. Weiher, J. Appl. Phys. 33 (1962) 2834.CrossRefGoogle Scholar
  10. 10.
    ASTM card 6-0416.Google Scholar
  11. 11.
    H. Köstlin, R. Jost and W. Lems, Phys. Status Solidi (a) 29 (1975) 87.CrossRefGoogle Scholar
  12. 12.
    J. Gardeen, F. J. Blatt and L. J. Hall, Photoconductivity Conference, 1954 (John Wiley & Sons, Inc., New York, 1956) p. 146.Google Scholar
  13. 13.
    Y. Ohhata, F. Shinoki and S. Yoshida, Thin Solid Films 59 (1979) 255.CrossRefGoogle Scholar
  14. 14.
    T. Haranou and S. Takagi, Hyoumengijyutu 40 (1989) 52.Google Scholar

Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • Keishi Nishio
    • 1
  • Tadanori Sei
    • 1
  • Toshio Tsuchiya
    • 1
  1. 1.Department of Materials Science and Technology, Faculty of Industrial Science and TechnologyScience University of TokyoChibaJapan

Personalised recommendations