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Journal of Materials Science

, Volume 31, Issue 7, pp 1761–1766 | Cite as

Preparation and electrical properties of ITO thin films by dip-coating process

  • Keishi Nishio
  • Tadanori Sei
  • Toshio Tsuchiya
Article

Abstract

Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 ∼ 20 mol% SnO2 were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO2 content. The ITO thin films containing 12 mol% SnO2 showed the minimum resistivity of ρ=1.2 × 10−3 (Ω cm). It also showed high carrier concentration of N=1.2 × 1020(cm−3) and mobility μH=7.0(cm2 V−1 s−1).

Keywords

SnO2 Electrical Resistivity Carrier Concentration Acetylacetone Quartz Glass 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • Keishi Nishio
    • 1
  • Tadanori Sei
    • 1
  • Toshio Tsuchiya
    • 1
  1. 1.Department of Materials Science and Technology, Faculty of Industrial Science and TechnologyScience University of TokyoChibaJapan

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