Journal of Materials Science

, Volume 29, Issue 6, pp 1417–1435 | Cite as

Characterization of boron nitride films deposited from BCl3-NH3-H2 mixtures in chemical vapour infiltration conditions

  • V. Cholet
  • L. Vandenbulcke
  • J. P. Rouan
  • P. Baillif
  • R. Erre


Boron nitride (BN) thin films deposited by isopressure and isothermal chemical vapour infiltration (ICVI) from BCl3-NH3-N2 mixtures have been characterized from a physicochemical point of view as functions of both the deposition conditions and the destabilizing action of moisture. As-deposited (deposited at 773 K and post-treated at 1273 K), the BN films are turbostractic (d0 0 2=0.36 nm, Lc=1.5 nm), have a low density (1.4 g cm−3) and contain oxygen (about 20 at%). A first oxygen content (191.5 eV by XPS) is inserted in the films during the CVI step in relation to the hygroscopy of intermediate solid products and the quasi-equilibrium between the formation of BN and B2O3. A second oxygen content (192.5 eV) is due to the hydrolysis of BN by moisture which induces a very drastic transformation of BN. This destabilization affects both boron and nitrogen atoms and leads to the formation of ammonium borate hydrates. Different post-treatments have been investigated to stabilize the BN films and it appears that nitriding under ammonia is the most efficient.


Hydrolysis Hydrate Boron Nitride Nitrogen Atom 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • V. Cholet
    • 1
  • L. Vandenbulcke
    • 1
  • J. P. Rouan
    • 1
  • P. Baillif
    • 2
  • R. Erre
    • 3
  1. 1.LCSR-CNRSOrléans Cedex 2France
  2. 2.University of Orléans, ESEMOrléansFrance
  3. 3.CRMD-CNRSOrléans Cedex 2France

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