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Journal of Materials Science

, Volume 29, Issue 6, pp 1417–1435 | Cite as

Characterization of boron nitride films deposited from BCl3-NH3-H2 mixtures in chemical vapour infiltration conditions

  • V. Cholet
  • L. Vandenbulcke
  • J. P. Rouan
  • P. Baillif
  • R. Erre
Papers

Abstract

Boron nitride (BN) thin films deposited by isopressure and isothermal chemical vapour infiltration (ICVI) from BCl3-NH3-N2 mixtures have been characterized from a physicochemical point of view as functions of both the deposition conditions and the destabilizing action of moisture. As-deposited (deposited at 773 K and post-treated at 1273 K), the BN films are turbostractic (d0 0 2=0.36 nm, Lc=1.5 nm), have a low density (1.4 g cm−3) and contain oxygen (about 20 at%). A first oxygen content (191.5 eV by XPS) is inserted in the films during the CVI step in relation to the hygroscopy of intermediate solid products and the quasi-equilibrium between the formation of BN and B2O3. A second oxygen content (192.5 eV) is due to the hydrolysis of BN by moisture which induces a very drastic transformation of BN. This destabilization affects both boron and nitrogen atoms and leads to the formation of ammonium borate hydrates. Different post-treatments have been investigated to stabilize the BN films and it appears that nitriding under ammonia is the most efficient.

Keywords

Hydrolysis Hydrate Boron Nitride Nitrogen Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • V. Cholet
    • 1
  • L. Vandenbulcke
    • 1
  • J. P. Rouan
    • 1
  • P. Baillif
    • 2
  • R. Erre
    • 3
  1. 1.LCSR-CNRSOrléans Cedex 2France
  2. 2.University of Orléans, ESEMOrléansFrance
  3. 3.CRMD-CNRSOrléans Cedex 2France

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