Journal of Materials Science

, Volume 31, Issue 3, pp 581–587 | Cite as

Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys

  • S. Marsillac
  • J. C. Bernéde
  • A. Conan


Electrical, optical and physico-chemical properties of disordered InxSe100−x thin films have been investigated for x ranging from 40–65. The films are found to be p-type for composition ranging from 45–60 at% selenium and n-type for compositions below 40 at% selenium. An increase in the conductivity, together with a decrease of the activation energy and of the optical gap, has also been observed when x varies from 40–65. These results have been interpreted through a theory based on the relative percentage evolution of the In-In and Se-Se chemical bonds and, on the other hand, by a percolation theory due to microcrystalline structures and indium filaments. These two models are discussed in reference to other publications.


Polymer Indium Thin Film Activation Energy Selenium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • S. Marsillac
    • 1
  • J. C. Bernéde
    • 1
  • A. Conan
    • 1
  1. 1.Faculté des Sciences et desTechniques de NantesLaboratoire de Physique des Matériaux pour l'ElectroniqueNantes cédex 03France

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