Journal of Materials Science

, Volume 29, Issue 22, pp 5953–5971 | Cite as

Anisotropic etching of silicon crystals in KOH solution

Part I Experimental etched shapes and determination of the dissolution slowness surface
  • C. R. Tellier
  • A. Brahim-Bounab


The anisotropic etching behaviour of various crystalline silicon plates in an aqueous KOH solution was studied. Variations of the etch rate with the angle of cut related to singly-rotated plates have been determined and orientation effects in the out-of-roundness profiles related to various {h k 0} sections have been analysed in terms of crystal symmetry. In addition, changes in the surface texture with crystal orientation were systematically investigated. All the experimental results furnished evidence for a dissolution process governed by the crystal orientation. A procedure has been proposed to derive the dissolution slowness surface from experiments starting from a tensorial representation of the anisotropic etching.


Polymer Silicon Material Processing Surface Texture Crystal Orientation 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • C. R. Tellier
    • 1
  • A. Brahim-Bounab
    • 1
  1. 1.Laboratoire de Chronométrie Electronique et PiézoélectricitéEcole Nationale Supérieure de Mécanique et des MicrotechniquesBesancon CedexFrance

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