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Journal of Materials Science

, Volume 29, Issue 9, pp 2389–2394 | Cite as

Oxide film formation on aluminium nitride substrates covered with thin aluminium layers

  • D. A. Robinson
  • G. Yin
  • R. Dieckmann
Papers

Abstract

The growth of oxide films on aluminium nitride substrates covered by vapour-deposited aluminium films of 1.5 and 4 μm thickness has been studied in air at atmospheric pressure as a function of temperature. Oxide films were grown by oxidation in air at temperatures between 800 and 1300°C. The kinetics of the growth of oxide films on such substrates was observed to be complex. In particular, there are three subsequent periods of observed oxide growth: (1) an initial period of rapid oxide growth, (2) an incubation period with very slow oxide growth, and (3) a second period of relatively fast oxide growth.

Keywords

Nitride Oxide Film Initial Period Film Formation Aluminium Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • D. A. Robinson
    • 1
  • G. Yin
    • 1
  • R. Dieckmann
    • 1
  1. 1.Department of Materials Science and Engineering, Bard HallCornell UniversityIthacaUSA

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