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Journal of Materials Science

, Volume 30, Issue 16, pp 4043–4048 | Cite as

R-curve behaviour of sintered silicon nitride

  • Y. W. Kim
  • M. Mitomo
  • N. Hirosaki
Article

Abstract

R-curves for two in situ reinforced silicon nitrides A and B of different microstructures were determined by three different characterization methods. The saturated crack growth resistance was found to be 5.2, 7.2 and 9.2 MPa m1/2 for silicon nitride A and 5.8, 8.0 and 10.0 MPam1/2 for silicon nitride B, respectively, by indentation, indentation-crack growth, and indentation-strength methods. The rising behaviour of R-curves was also found to depend on the characterization method. These results indicate that care should be taken in interpreting and utilizing R-curves evaluated from different characterization methods and an R-curve characterization method with appropriate qualifiers is needed for rising R-curve materials.

Keywords

Polymer Silicon Microstructure Nitride Material Processing 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Y. W. Kim
    • 1
  • M. Mitomo
    • 1
  • N. Hirosaki
    • 2
  1. 1.National Institute for Research in Inorganic MaterialsIbarakiJapan
  2. 2.Materials Research Laboratory, Nissan Research CentreNissan Motor Company LtdYokosukaJapan

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