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Journal of Materials Science

, Volume 29, Issue 14, pp 3837–3842 | Cite as

Charged defects-controlled conductivity in Ge-ln-Se glasses

  • Sudha Mahadevan
  • A. Giridhar
Article

Abstract

The variation of the d.c. electrical conductivity, σ, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ΔE, and an increase in σ on introduction of indium into Ge-Se glasses. The changes in ΔE and σ with composition (selenium content in the glasses) are identical for the Gex In5 Se95−x and Gex In8Se92−x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ΔE and σ have been explained by a shift in the Fermi level, being brought by the introduction of indium.

Keywords

Polymer Indium Activation Energy Electrical Conductivity Selenium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • Sudha Mahadevan
    • 1
  • A. Giridhar
    • 1
  1. 1.Materials Science DivisionNational Aeronautical LaboratoryBangaloreIndia

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