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Journal of Materials Science

, Volume 29, Issue 10, pp 2734–2740 | Cite as

Chemical-bath deposition of band-gap-tailored CdxPb1−xS films

  • H. M. Upadhyaya
  • S. Chandra
Papers

Abstract

An attempt was made to modify the band gap of CdS (∼ 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1−xS. Band gaps as low as ∼ 1.9 eV were achieved with increasing x. The preparation of CdxPb1−xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.

Keywords

Polymer Microscopy Optical Microscopy Material Processing Energy Dispersion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • H. M. Upadhyaya
    • 1
  • S. Chandra
    • 1
  1. 1.Department of PhysicsBanaras Hindu UniversityVaranasiIndia

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