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Journal of Materials Science

, Volume 29, Issue 10, pp 2697–2703 | Cite as

Interactions between Al-1 wt% Si thin film and W-Ti barrier layer

  • Peng -Heng Chang
  • Huei -Ming Chen
  • Hung -Yu Liu
  • J. G. Bohlman
Papers
  • 33 Downloads

Abstract

The interaction of Al-1 wt% Si with a W-Ti barrier layer in the Al/Ti3W7/SiO2/Si system was studied over the temperature range of 400–500 °C for reaction times up to 300 h. The interaction was found to be diffusion-controlled, and to occur in a layer-by-layer fashion. The first reaction product is always Al12W, which forms at the Al/Ti3W7 interface. With excess W in the system, Al will eventually be completely converted to Al12W, and further interactions result in the formation of an Al4W layer at the Al12W/Ti3W7 interface. The amount of Al4W increases at the expense of Al12W. Ti plays a minor role in the interaction and forms a small amount of Al3Ti precipitates in the Al12W matrix. Decomposition of the Ti3W7 pseudoalloy into W and Ti phases is not significant, and is not detected by X-ray diffraction even after annealing at 500 °C for 300 h. The kinetics of the Al12W formation follows a parabolic reaction law with an activation energy of 2.53 eV. The sheet resistance of the film is insensitive to compound formation as long as a continuous Al film exists in the system. The sheet resistance increases dramatically when Al is consumed to the extent that it is no longer a continuous film. The sheet resistance of the Al12W layer is estimated to be 570 mΩ □−1.

Keywords

Polymer Thin Film Reaction Time Activation Energy Expense 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • Peng -Heng Chang
    • 1
  • Huei -Ming Chen
    • 1
  • Hung -Yu Liu
    • 2
  • J. G. Bohlman
    • 2
  1. 1.Institute of Materials Science and EngineeringNational Chiao Tung UniversityHsinchuTaiwan
  2. 2.Materials Science LaboratoryTexas Instruments Inc.DallasUSA

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