Advertisement

Journal of Materials Science

, Volume 30, Issue 22, pp 5687–5690 | Cite as

Investigation of the process of diamond formation from SiC under high pressure and high temperature

  • Li Gou
  • Shiming Hong
  • Qingquan Gou
Papers

Abstract

SiC powder or graphite in contact with cobalt, nickel or a Ni70Mn25Co5 alloy was treated at high pressure and high temperature in stable region of diamond. It was found that Ni70Mn25Co5 alloy is more effective in the process of diamond formation from SiC than the others, but the difference was not apparent when graphite was used instead of SiC. Using the Ni70Mn25Co5 alloy, diamond formed rapidly with the decomposition of SiC at a pressure of 5.4–6.0 GPa and temperature 1350–1570°C, and the growth tended to stagnate after 6 min, when SiC was completely exhausted. X-ray diffraction showed that the relative intensity of the diffraction lines of diamond and graphite was nearly constant in the samples synthesized under the same conditions for 2, 4 and 6 min. The results suggest that diamond and graphite may be formed directly and respectively from separated carbon atoms in a short time.

Keywords

Polymer Nickel Graphite Cobalt High Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    F. P. Bundy, H. T. Hall, H. M. Strong and R. H. Wentorf Jr, Nature 176 (1955) 51.CrossRefGoogle Scholar
  2. 2.
    H. P. Bovenkerk, F. P. Bundy, H. T. Hall, H. M. Strong and R. H. Wentorf Jr, ibid. 184 (1959) 1094.CrossRefGoogle Scholar
  3. 3.
    R. H. Wentorf Jr, J. Phys. Chem. 69 (1965) 3063.CrossRefGoogle Scholar
  4. 4.
    F. P. Bundy, H. M. Strong and R. H. Wentorf Jr, in “Chemistry and physics of carbon”, edited by P. L. Walker Jr and P. A. Thrower, Vol. 10 (Marcel Dekker, New York, 1973) pp. 213–63.Google Scholar
  5. 5.
    E. Wolf, H. Oppermann, H. Hennig, U. Gerlach, G. Glosse and G. Risse, Ger. (East) Pat. DD259 147 (1988).Google Scholar
  6. 6.
    U. Gerlach, H. Hennig, H. Oppermann, G. Risse and E. Wolf, Ger. (East) Pat. DD257 375 (1988).Google Scholar
  7. 7.
    E. Woermann, Ger. pat. 2721 644 (1978).Google Scholar
  8. 8.
    S. M. Hong, and M. Wakatsuki, J. Mater. Sci. Lett. 12 (1993) 283.CrossRefGoogle Scholar
  9. 9.
    S. M. Hong, W. Li, X. P. Jia and M. Wakatsuki, Diamond Rel. Mater. 2 (1993) 508.CrossRefGoogle Scholar
  10. 10.
    S. M. Hong, X. J. Luo, S. X. Cheng and Y. G. Wang, Chin. J. High Press. Phys. 3 (1989) 159.Google Scholar

Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Li Gou
    • 1
  • Shiming Hong
    • 1
  • Qingquan Gou
    • 1
  1. 1.Institute of Applied PhysicsChengdu University of Science and TechnologyChendgduPeople’s Republic of China

Personalised recommendations