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Journal of Materials Science

, Volume 30, Issue 3, pp 734–736 | Cite as

Crystallization process on amorphous Mg-Ga-Sn system

  • M. Fontana
  • B. Arcondo
Papers

Abstract

The crystallization processes on Mg81.09Ga18.91 and Mg80.50Ga17.76Sn1.67 amorphous samples were studied by means of X-ray diffraction and electrical resistivity isothermal measurements. A small amount of Sn added to the binary eutectic was found to modify the crystallization products and the evolution time. Crystallization activation energies were estimated.

Keywords

Polymer Crystallization Activation Energy Evolution Time Electrical Resistivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • M. Fontana
    • 1
  • B. Arcondo
    • 1
  1. 1.Departamento de Fisica, Facultad de IngenieriaUniversidad de Buenos AiresBuenos AiresArgentina

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