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Journal of Materials Science

, Volume 30, Issue 3, pp 678–682 | Cite as

Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

  • Hee Jeen Kim
  • Jae Sung Kim
  • Yong Kim
  • Moo Sung Kim
  • Suk-Ki Min
Papers

Abstract

The cross-section of multilayered Al0.5Ga0.5As/GaAs epitaxial structure was investigated by atomic force microscopy (AFM). For the first time, a 5% NaClO etchant was employed to discern each layer and a clear cross-sectional image of the multilayered epitaxial structure was obtained in less than 3 s etching time. The AFM image using 0.1 m HCl was poorer than that using 5% NaClO; this is attributed to the difference in etching selectivity between HCl and NaClO solution.

Keywords

Polymer Microscopy Atomic Force Microscopy Material Processing Atomic Force Microscopy Image 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Hee Jeen Kim
    • 1
  • Jae Sung Kim
    • 1
  • Yong Kim
    • 2
  • Moo Sung Kim
    • 2
  • Suk-Ki Min
    • 2
  1. 1.Division of Electronics and Information TechnologyKorea Institute of Science and TechnologyCheongryang, SeoulKorea
  2. 2.Department of PhysicsSookmyung Women's UniversityChungpa-dong, SeoulKorea

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