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Journal of Materials Science

, Volume 30, Issue 5, pp 1386–1390 | Cite as

Antiferroelectric lead zirconate thin films derived from acetate precursors

  • K. K. Li
  • F. Wang
  • G. H. Haertling
Papers

Abstract

Antiferroelectric lead zirconate (PbZrO3) films derived from acetate precursors have been fabricated on Pt/Ti-coated silicon wafers and fused silica at 700 °C with an automatic dip-coating process. Films formed directly on the metallized silicon wafer showed the coexistence of perovskite and pyrochlore phases. A pre-coated titania layer of about 10 nm facilitated the formation of the desired perovskite phase. Films deposited on fused silica exhibited interactions between lead and silica which inhibited the crystallization of the films. In this case, a pre-coated titania layer in the range 50–75 nm acted as a diffusion barrier layer, allowing the formation of the perovskite phase. Antiferroelectricity in the films was confirmed by X-ray superstructure, dielectric double hysteresis loops and d.c. bias behaviour at room temperature. The corresponding transverse electro-optic properties were also measured for films deposited on fused silica.

Keywords

Crystallization Perovskite Hysteresis Loop Silicon Wafer Fuse Silica 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • K. K. Li
    • 1
  • F. Wang
    • 1
  • G. H. Haertling
    • 1
  1. 1.Department of Ceramic EngineeringClemson UniversityClemsonUSA

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