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Journal of Materials Science

, Volume 29, Issue 15, pp 4037–4042 | Cite as

An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry

  • A. T. S. Wee
  • C. H. A. Huan
  • K. L. Tan
  • R. S. K. Tan
Papers

Abstract

The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed.

Keywords

Polymer Mass Spectrometry CCl4 Material Processing Tetrachloride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • A. T. S. Wee
    • 1
  • C. H. A. Huan
    • 1
  • K. L. Tan
    • 1
  • R. S. K. Tan
    • 1
  1. 1.Department of PhysicsNational University of SingaporeSingaporeSingapore

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