Journal of Materials Science

, Volume 29, Issue 24, pp 6354–6378 | Cite as

Anisotropic etching of silicon crystals in KOH solution

Part II Theoretical two-dimensional etched shapes: discussion of the adequation of the dissolution slowness surface
  • C. R. Tellier
  • A. Brahim-Bounab


Theoretical two-dimensional etched shapes are derived from numerical simulations involving the equation of the dissolution slowness surface related to silicon crystals etched in aqueous KOH solutions. Theoretical changes in cross-sectional shapes of starting circular sections and in x′1 and [001] profilometry traces with the angle of cut, ϕo, are analysed in terms of the geometrical features of the slowness surface. The important role played by extrema in the dissolution slowness in determining the final two-dimensional etched shapes, is outlined. Theoretical etched shapes are systematically compared with the experimental shapes and the adequation of the proposed slowness surface is discussed.


Polymer Silicon Material Processing Geometrical Feature Silicon Crystal 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • C. R. Tellier
    • 1
  • A. Brahim-Bounab
    • 1
  1. 1.Laboratoire de Chronométrie Electronique et PiézoélectricitéEcole Nationale Supérieure de Mécanique et des MicrotechniquesBesancon CedexFrance

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