Journal of Materials Science

, Volume 29, Issue 4, pp 1041–1044 | Cite as

Si-rich surface layer of photochemically deposited silicon nitride

  • T. Wadayama
  • H. Shibata
  • T. Kobayashi
  • A. Hatta


The etching reaction of a photochemically deposited silicon nitride film with F2 has been observed in situ using polarization-modulation infrared spectroscopy and quadruple mass spectrometry. The infrared spectrum of the silicon nitride film before etching exhibited two bands at 1030 and 975 cm−1, arising from Si-N vibration. Exposure of the film at 423 K to F2 led to an intensity decrease of the lower-frequency band, while the higher-frequency band increased. Simultaneous mass analysis revealed that the etching products evolved into the gas phase were SiF4 and H2. However, a further admission of F2 resulted in a slight decrease in intensity of the 975 cm−1 band as well as a slight evolution of SiF4. These results strongly suggest the presence of a metastable Si-rich layer on the surface of the silicon nitride film prior to reaction with F2. Infrared measurements have also been made in the Si-H stretching region, the results of which are described and discussed.


Mass Spectrometry Nitride Infrared Spectroscopy Infrared Spectrum Silicon Nitride 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • T. Wadayama
    • 1
  • H. Shibata
    • 1
  • T. Kobayashi
    • 1
  • A. Hatta
    • 1
  1. 1.Department of Materials Science, Faculty of EngineeringTohoku UniversitySendaiJapan

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