Journal of Materials Science

, Volume 29, Issue 7, pp 1879–1883 | Cite as

Growth and characterization of some I–III–VI2 compound semiconductors

  • K. Balakrishnan
  • B. Vengatesan
  • P. Ramasamy


Single crystals of CulnS2, CulnSe2, CulnTe2, CuGaS2, AgGaS2 CulnSSe, AgGaSSe have been grown by chemical vapour transport technique on the basis of a new general thermodynamical model which enables the minimum source temperature Ts, and the minimum deposition temperature, Td, to be determined. X-ray analysis, X-ray photoelectron spectroscopic analysis, surface analysis, and microhardness studies have been carried out on the single crystals grown.


Polymer Chemical Vapour Material Processing Thermodynamical Model Surface Analysis 
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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • K. Balakrishnan
    • 1
  • B. Vengatesan
    • 1
  • P. Ramasamy
    • 1
  1. 1.Crystal Growth CentreAnna UniversityMadrasIndia

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