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Journal of Materials Science

, Volume 29, Issue 7, pp 1879–1883 | Cite as

Growth and characterization of some I–III–VI2 compound semiconductors

  • K. Balakrishnan
  • B. Vengatesan
  • P. Ramasamy
Papers

Abstract

Single crystals of CulnS2, CulnSe2, CulnTe2, CuGaS2, AgGaS2 CulnSSe, AgGaSSe have been grown by chemical vapour transport technique on the basis of a new general thermodynamical model which enables the minimum source temperature Ts, and the minimum deposition temperature, Td, to be determined. X-ray analysis, X-ray photoelectron spectroscopic analysis, surface analysis, and microhardness studies have been carried out on the single crystals grown.

Keywords

Polymer Chemical Vapour Material Processing Thermodynamical Model Surface Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1994

Authors and Affiliations

  • K. Balakrishnan
    • 1
  • B. Vengatesan
    • 1
  • P. Ramasamy
    • 1
  1. 1.Crystal Growth CentreAnna UniversityMadrasIndia

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