Observation of deep levels associated with dislocations in n-type Hg0.3Cd0.7Te
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Deep level transient spectroscopy (DLTS) has been used to study the traps associated with dislocations in n-type Hg0.3Cd0.7Te. Dislocations have been generated by ion implantation at high fluence. Two of the broadened lines (E1=Ec−0.22eV and E1=Ec−0.34eV), we have observed, show a logarithmic dependence with the filling pulse. They are characteristic of point defect clouds surrounding or generated by the dislocations. An unusual broadened line (E2=Ec−0.27eV) has also been observed, its amplitude decreases for filling pulses longer than 50 μs. This can be explained by a configuration change of the defect leading to the appearance of a new DLTS line. In addition, an electron trap (EP4=Ec−0.22eV), which seems to behave like an isolated point defect, has also been found.
KeywordsPolymer Spectroscopy Material Processing Point Defect Deep Level
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