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Journal of Materials Science

, Volume 30, Issue 11, pp 2895–2900 | Cite as

Thermodynamic analysis of chemical vapour deposition from methoxysilanes

  • D. W. Skaf
  • K. E. Burns
Papers
  • 33 Downloads

Abstract

Thermodynamic equilibrium calculations for the systems n-methoxysilane, SiH4−n (OCH3)n, n = 1–4, were performed using the STANJAN computer code. The required enthalpy and entropy data for the methoxysilanes were estimated using the MOPAC computer program for semi-empirical molecular orbital calculations. The calculated solid-phase compositions were not sensitive to ± 10% changes in the n-methoxysilane enthalpy and entropy values. For n = 2, 3 or 4, the equilibrium solids were comprised of SiO2 and C. The purest SiO2 was predicted for 2-MEOS at atmospheric pressure, low temperature, and an excess of hydrogen. For all n-methoxysilanes, the solid carbon content increased rapidly at moderate temperatures but did not continue to increase at the highest temperatures.

Keywords

Entropy SiO2 Enthalpy Chemical Vapour Deposition Computer Code 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • D. W. Skaf
    • 1
  • K. E. Burns
    • 1
  1. 1.Department of Chemical EngineeringVillanova UniversityVillanovaUSA

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