Journal of Materials Science

, Volume 30, Issue 11, pp 2838–2842 | Cite as

Electrical properties and phase transition of Ge1−xSnxSe2.5 thin films

  • S. A. Fayek
  • M. H. Ali


The Ge1−xSnxSe2.5 system was prepared by melting the correct ratio of high purity elements in quartz evacuated ampoules followed by quenching in ice. It was found that, within the Ge1−xSnxSe2.5 system, a glassy state can be formed when 0 ⩽ x ⩽ 0.4. On increasing x to 0.6 a glassy state could not be obtained, as is confirmed by X-ray diffraction. Differential thermal analysis (DTA) was carried out to study the effect of composition on the stability of amorphous phase. Ge1−xSnxSe2.5 (where 0 ⩽ x ⩽ 0.6) thin films have been prepared by the thermal evaporation technique. The electrical conductivity of the thin films have been studied as a function of composition and film thickness.


Thin Film Quartz Evaporation Phase Transition Electrical Conductivity 
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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • S. A. Fayek
    • 1
  • M. H. Ali
    • 2
  1. 1.Solid State DepartmentNational Centre for Radiation Research and TechnologyNasr City, CairoEgypt
  2. 2.Physics Department, Faculty of ScienceAin Shams UniversityAbassia, CairoEgypt

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