Electrical properties and phase transition of Ge1−xSnxSe2.5 thin films
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The Ge1−xSnxSe2.5 system was prepared by melting the correct ratio of high purity elements in quartz evacuated ampoules followed by quenching in ice. It was found that, within the Ge1−xSnxSe2.5 system, a glassy state can be formed when 0 ⩽ x ⩽ 0.4. On increasing x to 0.6 a glassy state could not be obtained, as is confirmed by X-ray diffraction. Differential thermal analysis (DTA) was carried out to study the effect of composition on the stability of amorphous phase. Ge1−xSnxSe2.5 (where 0 ⩽ x ⩽ 0.6) thin films have been prepared by the thermal evaporation technique. The electrical conductivity of the thin films have been studied as a function of composition and film thickness.
KeywordsThin Film Quartz Evaporation Phase Transition Electrical Conductivity
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