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Journal of Materials Science

, Volume 30, Issue 11, pp 2838–2842 | Cite as

Electrical properties and phase transition of Ge1−xSnxSe2.5 thin films

  • S. A. Fayek
  • M. H. Ali
Papers

Abstract

The Ge1−xSnxSe2.5 system was prepared by melting the correct ratio of high purity elements in quartz evacuated ampoules followed by quenching in ice. It was found that, within the Ge1−xSnxSe2.5 system, a glassy state can be formed when 0 ⩽ x ⩽ 0.4. On increasing x to 0.6 a glassy state could not be obtained, as is confirmed by X-ray diffraction. Differential thermal analysis (DTA) was carried out to study the effect of composition on the stability of amorphous phase. Ge1−xSnxSe2.5 (where 0 ⩽ x ⩽ 0.6) thin films have been prepared by the thermal evaporation technique. The electrical conductivity of the thin films have been studied as a function of composition and film thickness.

Keywords

Thin Film Quartz Evaporation Phase Transition Electrical Conductivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • S. A. Fayek
    • 1
  • M. H. Ali
    • 2
  1. 1.Solid State DepartmentNational Centre for Radiation Research and TechnologyNasr City, CairoEgypt
  2. 2.Physics Department, Faculty of ScienceAin Shams UniversityAbassia, CairoEgypt

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