Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces

  • 25 Accesses

  • 1 Citations

Abstract

The investigation of thermal stability of WN x /GaAs Schottky contacts prepared by selective ion implantation of nitrogen into tungsten film has been demonstrated. Auger electron spectroscopy was used for characterization of thermal stability of the interfaces after rapid thermal annealing at 950 ‡C for 10s. Significant oxygen influence on migration of Ga atoms from the substrate into metallization systems was observed.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    T. Lalinsky, J. Kuzmik, D. Gregusova, Z. Mozolova, J. Breza, M. Fecisko and P. Seidl, J. Mater. Sci., Mater. Elect. 3 (1992) 157.

  2. 2.

    Y. Kuriyama, S. Ohfuji and J. Nagano, J. Appl. Phys. 62 (1987) 1318.

  3. 3.

    Y. KURIYAMA and S. OHFUJI, ibid. J. Appl. Phys. 66 (1989) 2446.

  4. 4.

    M. Lustig and R. G. Schad, Appl. Phys. Lett. 60 (1992) 1984.

  5. 5.

    K. M. Yu, J. M. Jaklevic, E. E. Haller, S. K. Cheung and S. P. Kwok, J. Appl. Phys. 64 (1988) 1284.

  6. 6.

    C. T. Frank, E. Kolawa, X. Zhao and M. A. Nicolet, Thin Solid Films 153 (1987) 507.

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Gregušová, D., Lalinský, T., Mozolová, ž. et al. The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces. J Mater Sci: Mater Electron 4, 197–199 (1993). https://doi.org/10.1007/BF00224740

Download citation

Keywords

  • Oxygen
  • Nitrogen
  • Migration
  • Thermal Stability
  • Tungsten