Volume 102, Issue 4

Search all Applied Physics A articles

March 2011

Special Issue: "Memristive and Resistive Devices and Systems"

Issue Editors:

Dongmin Chen,
Leon O. Chua,
Cheol Seong Hwang,
Shih-Yuan Wang,
Rainer Waser,
R. Stanley Williams,
Jianhua Yang

36 articles in this issue

Resistance switching memories are memristors
Leon Chua
OriginalPaper Open access 28 January 2011 Pages: 765 - 783
Metal/TiO₂ interfaces for memristive switches
J. Joshua Yang
John Paul Strachan
R. Stanley Williams
OriginalPaper Open access 26 January 2011 Pages: 785 - 789
Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM
Carsten Kügeler
Roland Rosezin
Rainer Waser
OriginalPaper 29 January 2011 Pages: 791 - 809
Memristive operations demonstrated by gap-type atomic switches
Tsuyoshi Hasegawa
Alpana Nayak
Masakazu Aono
OriginalPaper 03 February 2011 Pages: 811 - 815
Inherent diode isolation in programmable metallization cell resistive memory elements
Sarath C. Puthentheradam
Dieter K. Schroder
Michael N. Kozicki
OriginalPaper 26 January 2011 Pages: 817 - 826
Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy
Min Hwan Lee
Kyung Min Kim
Cheol Seong Hwang
OriginalPaper 21 January 2011 Pages: 827 - 834
Intrinsic resistive switching and memory effects in silicon oxide
Jun Yao
Lin Zhong
James M. Tour
OriginalPaper 26 January 2011 Pages: 835 - 839
Redox driven conductance changes for resistive memory
Lian C. T. Shoute
Nikola Pekas
Richard L. McCreery
OriginalPaper 26 January 2011 Pages: 841 - 850
Intrinsic constrains on thermally-assisted memristive switching
Dmitri B. Strukov
R. Stanley Williams
OriginalPaper Open access 26 January 2011 Pages: 851 - 855
Synaptic behaviors and modeling of a metal oxide memristive device
Ting Chang
Sung-Hyun Jo
Wei Lu
OriginalPaper 05 February 2011 Pages: 857 - 863
Artificial cognitive memory—changing from density driven to functionality driven
L. P. Shi
K. J. Yi
T. C. Chong
OriginalPaper 05 February 2011 Pages: 865 - 875
Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
Mohammad Noman
Wenkan Jiang
James A. Bain
OriginalPaper 19 January 2011 Pages: 877 - 883
Chaotic memristor
T. Driscoll
Y. V. Pershin
M. Di Ventra
OriginalPaper Open access 05 February 2011 Pages: 885 - 889
Molecular dynamics simulations of oxide memristors: thermal effects
S. E. Savel’ev
A. S. Alexandrov
R. Stanley Williams
OriginalPaper Open access 05 February 2011 Pages: 891 - 895
Resistive switching behavior in a Ni–Ag₂Se–Ni nanowire
N. J. Lee
B. H. An
C. J. Kang
OriginalPaper 08 February 2011 Pages: 897 - 900
A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM
W. C. Chien
Y. C. Chen
Chih-Yuan Lu
OriginalPaper 26 January 2011 Pages: 901 - 907
Multiscale simulation on electromigration of the oxygen vacancies in metal oxides
Sang Ho Jeon
Won-Joon Son
Seungwu Han
OriginalPaper 21 January 2011 Pages: 909 - 914
Resistive switching mechanism of Ag/ZrO₂:Cu/Pt memory cell
Shibing Long
Qi Liu
Ming Liu
OriginalPaper 26 January 2011 Pages: 915 - 919
Engineering of tunnel barrier for highly integrated nonvolatile memory applications
Hee-Wook You
Jung-Woo Son
Won-Ju Cho
OriginalPaper 19 January 2011 Pages: 921 - 926
Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications
Ru Huang
Lijie Zhang
Yangyuan Wang
OriginalPaper 03 March 2011 Pages: 927 - 931
Resistance switching properties of In₂O₃ nanocrystals memory device with organic and inorganic hybrid structure
Dong Uk Lee
Eun Kyu Kim
Young-Ho Kim
OriginalPaper 19 January 2011 Pages: 933 - 938
Resistance switching effect in LaAlO₃/Nb-doped SrTiO₃ heterostructure
H. F. Tian
Y. G. Zhao
J. R. Sun
OriginalPaper 26 January 2011 Pages: 939 - 942
Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy
Feng Miao
Douglas A. A. Ohlberg
Chun Ning Lau
OriginalPaper 08 February 2011 Pages: 943 - 948
Transport characteristics and surface potential distribution of electrically stressed TiO₂ single crystals
Haeri Kim
Dong-Wook Kim
OriginalPaper 26 January 2011 Pages: 949 - 953
Nanoscale resistive switches: devices, fabrication and integration
Qiangfei Xia
OriginalPaper 01 February 2011 Pages: 955 - 965
Impact of amorphous titanium oxide film on the device stability of Al/TiO₂/Al resistive memory
Hu Young Jeong
Sung Kyu Kim
Sung-Yool Choi
OriginalPaper 21 January 2011 Pages: 967 - 972
Feedback write scheme for memristive switching devices
Wei Yi
Frederick Perner
R. Stanley Williams
OriginalPaper Open access 27 January 2011 Pages: 973 - 982
Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell
Sung-Min Yoon
Shinhyuk Yang
Byoung-Gon Yu
OriginalPaper 29 January 2011 Pages: 983 - 990
Engineering oxide resistive switching materials for memristive device application
Lifeng Liu
Bing Chen
Jinfeng Kang
OriginalPaper 16 February 2011 Pages: 991 - 996
Enhanced bipolar resistive switching of HfO₂ with a Ti interlayer
DooSung Lee
YongHun Sung
Dae-Hong Ko
OriginalPaper 22 February 2011 Pages: 997 - 1001
Programming resistive switching memory by a charged capacitor
Sen Zhang
Qi Liu
Ming Liu
OriginalPaper 05 February 2011 Pages: 1003 - 1007
Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO_x/TiO_y frameworks due to oxygen vacancy drifts
Yoon Cheol Bae
Ah Rahm Lee
Jin Pyo Hong
OriginalPaper 27 January 2011 Pages: 1009 - 1013
Performance improvement of Cu_xO resistive switching memory by surface modification
Hangbing Lv
Tingao Tang
OriginalPaper 22 January 2011 Pages: 1015 - 1018
Synaptic behaviors of a single metal–oxide–metal resistive device
Sang-Jun Choi
Guk-Bae Kim
Kyung-Jin Lee
OriginalPaper 22 January 2011 Pages: 1019 - 1025
Dc current transport behavior in amorphous GeSe films
Doo Seok Jeong
Goon-Ho Park
Byung-ki Cheong
OriginalPaper 26 January 2011 Pages: 1027 - 1032
An ionic bottle for high-speed, long-retention memristive devices
Dmitri B. Strukov
R. Stanley Williams
OriginalPaper Open access 16 February 2011 Pages: 1033 - 1036

Volume 102, Issue 4

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