Abstract
The electronic structure and electrical properties of low-dimensional semiconductor heterostructures are reviewed. Perpendicular and parallel transport in GaAs/GaAlAs heterostructures is discussed, as well as novel quantum phenomena induced by strong magnetic fields and lateral confinement.
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© 1993 Springer-Verlag
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Pulsford, N. (1993). Electronic structure and electrical characterisation of semiconductor heterostructures. In: Ploog, K.H., Tapfer, L. (eds) Physics and Technology of Semiconductor Quantum Devices. Lecture Notes in Physics, vol 419. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034405
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DOI: https://doi.org/10.1007/BFb0034405
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