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Electronic and optical properties of low-dimensional semiconductor structures

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Physics and Technology of Semiconductor Quantum Devices

Part of the book series: Lecture Notes in Physics ((LNP,volume 419))

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Abstract

This paper reviews the use of photoluminescence and photoluminescence excitation spectroscopy for the study of low-dimensional electron and hole gases in modulation- and δ-doped semiconductor heterostructures. This type of spectroscopy provides information on the subband structure and band filling in those structures. In addition, insight is gained in electron-hole many-body interactions, such as the so-called Fermi edge singularity, and in the electron-hole interaction strength. The latter information can be extracted from, e.g., the optical measurement of electron spin relaxation. kinetics. Selected examples, mainly based on GaAs/AlxGa1-xAs heterostructures, will be discussed.

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Authors and Affiliations

  1. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-7800, Freiburg, Germany

    Joachim Wagner

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  1. Joachim Wagner
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Klaus H. Ploog Leander Tapfer

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© 1993 Springer-Verlag

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Wagner, J. (1993). Electronic and optical properties of low-dimensional semiconductor structures. In: Ploog, K.H., Tapfer, L. (eds) Physics and Technology of Semiconductor Quantum Devices. Lecture Notes in Physics, vol 419. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034404

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  • DOI: https://doi.org/10.1007/BFb0034404

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-56989-3

  • Online ISBN: 978-3-540-47850-8

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