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Amorphous Group III–V Semiconductors

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X-Ray Absorption Spectroscopy of Semiconductors

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

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Abstract

Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor and a decrease in coordination number relative to the crystalline phase. A second component of disorder, unique to compound semiconductors, is chemical disorder in the form of homopolar bonding. In this chapter, the application of XAS to the characterisation of both structural and chemical disorder in the amorphous Group III–V semiconductors is described with an emphasis on the identification and quantification of homopolar bonding. We show chemical disorder is characteristic of these materials, comprising \(\sim \)5–15 % of all bonds, and also demonstrate that XAS is an ideal technique for such studies.

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Acknowledgments

The author gratefully acknowledges C.J. Glover, C.S. Schnohr, G. de M. Azevedo, G.J. Foran, K.M. Yu, S.M. Kluth and P. Kluth for significant contributions, fruitful collaborations and memorable times at XAS beamlines around the world in our pursuit of the atomic-scale structure of the amorphous Group III–V semiconductors. The author thanks the Australian Research Council, Australian Synchrotron Research Program and Australian Synchrotron for financial support. Sample fabrication was enabled through access to the ACT Node of the Australian National Fabrication Facility.

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  1. Department of Electronic Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia

    Mark C. Ridgway

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  1. Mark C. Ridgway
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Correspondence to Mark C. Ridgway .

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  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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Ridgway, M.C. (2015). Amorphous Group III–V Semiconductors. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_8

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  • DOI: https://doi.org/10.1007/978-3-662-44362-0_8

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