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Dopants

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X-Ray Absorption Spectroscopy of Semiconductors

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

Abstract

The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties. After a brief introduction to the use of XAFS in this field a review of the literature will be presented, ranging from the pioneering studies of As in amorphous Si to recent investigations on semiconductor systems of current interest.

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Authors and Affiliations

  1. Department of Physics and Astronomy, University of Bologna, Viale C. Berti Pichat 6/2, 40127, Bologna, Italy

    Federico Boscherini

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  1. Federico Boscherini
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Correspondence to Federico Boscherini .

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Editors and Affiliations

  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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Boscherini, F. (2015). Dopants. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_4

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