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Group III–V and II–VI Nanowires

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X-Ray Absorption Spectroscopy of Semiconductors

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

Abstract

In this contribution a review on the studies based on X-ray absorption spectroscopy (XAS) on III–V and II–VI nanowires in the recent years is presented. Examples of structural characterization of several systems like pure semiconductors (mainly ZnO, ZnS, GaN) and doped materials (with transition metals Co, Mn, Fe and rare earth ions Eu, Er) are presented. XAS in the various cases has played a major role in explaining the observed physical properties or to validate new production routes. Advanced data collection and analysis methods like micro-XAS, site selective XAS via optical emission, comparison between XAS and results of structural modeling have demonstrated to be valuable tools for a more complete understanding of the XAS data.

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Notes

  1. 1.

    This supposes the availability of a pulsed source as frequently encountered in 3rd generation synchrotrons: in this case the X-ray pulses were 80 ps wide with a repetition time of 153 ns.

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  1. CNR-IOM-OGG c/o European Synchrotron Radiation Facility-GILDA CRG, ESRF 71, avenue des Martyrs - CS 40220, 38043, Grenoble Cedex 9, France

    Francesco d’Acapito

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Correspondence to Francesco d’Acapito .

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  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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d’Acapito, F. (2015). Group III–V and II–VI Nanowires. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_13

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