Abstract
X-ray absorption fine structure spectroscopy and related techniques such as X-ray emission spectroscopy and X-ray Excited Optical luminescence play a significant role in understanding the electronic structures of group IV semiconductor nanowires. This chapter reviews how these techniques have been recently used to reveal the unique properties of group IV semiconductor nanowires, especially silicon and germanium, and their oxides. Other group IV nanowires, such as carbon and tin nanowires are also noted.
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Acknowledgments
Xuhui Sun thanks the financial support from the National Basic Research Program of China (973 Program) (Grant No. 2010CB934500) and the Priority Academic Program Development of Jiangsu Higher Education Institutions. TKS wishes to thank all his students, postdoctoral fellows and visiting scientists as well as colleagues at the Canadian Synchrotron Radiation Facility, Synchrotron Radiation Center, University of Wisconsin-Madison, Canadian Light Source, and Advanced Photon Source for their participation and collaboration in some of the work described herein.
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Sun, X., Sham, TK. (2015). Group IV Nanowires. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_11
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