Abstract
In earlier sections, we studied the transport phenomena in nearly AF metals without randomness. By including CVCs, we succeeded in explaining the anomalous DC and AC transport phenomena in a unified way, in both hole- and electron-doped cuprate HTSCs. However, effects of impurity or disorder cannot be negligible in many compounds. In fact, the residual resistivity due to disorder increases drastically as the system approaches to the half-filling [1]. Moreover, STM/STS measurements revealed that the electronic states in under-doped HTSCs are highly inhomogeneous at the nanoscale, reflecting the random potential induced by the disordered atoms outside of the \(\mathrm{{CuO}}_2\) plane [2]. These experimental facts are reproduced by assuming that the SC pairing interaction (due to spin fluctuations) is strongly influenced by the impurity potential [3, 4].
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Kontani, H. (2013). Impurity Effects in Nearly AF Metals. In: Transport Phenomena in Strongly Correlated Fermi Liquids. Springer Tracts in Modern Physics, vol 251. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35365-9_8
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