Abstract
In inversion asymmetric semiconductors, spin–orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D’yakonov Perel’ mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit.
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Acknowledgments
We would like to thank D.D. Awschalom, H. Knotz, F. Meier, V. Sih, R.C. Myers, A.C. Gossard, V. Khrapey, J.P. Kotthaus for discussions and support. We gratefully acknowledge financial support from the Center for NanoScience (CeNS) in Munich, Germany, the ONR, DARPA, and the California NanoSystems Institute (CNSI) at the University of California, Santa Barbara, USA, the DFG Project No. HO-3324/4, and the German Excellence Initiative via ”Nanosystems Initiative Munich (NIM)” and ”LMUexcellent”.
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Holleitner, A.W. (2010). Spin Relaxation: From 2D to 1D. In: Vojta, M., Röthig, C., Schön, G. (eds) CFN Lectures on Functional Nanostructures - Volume 2. Lecture Notes in Physics, vol 820. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-14376-2_8
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