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Springer Handbook of Nanotechnology pp 271–312Cite as

Nanoimprint Lithography – Patterning of Resists Using Molding

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Abstract

Nanoimprint lithography (NIL) is an emerging high-resolution parallel patterning method, mainly aimed towards fields in which electron-beam and high-end photolithography are costly and do not provide sufficient resolution at reasonable throughput. In a top-down approach, a surface pattern of a stamp is replicated into a material by mechanical contact and three-dimensional material displacement. This can be done by shaping a liquid followed by a curing process for hardening, by variation of the thermomechanical properties of a film by heating and cooling, or by any other kind of shaping process using the difference in hardness of a mold and a moldable material. The local thickness contrast of the resulting thin molded film can be used as a means to pattern an underlying substrate at the wafer level by standard pattern transfer methods, but also directly in applications where a bulk modified functional layer is needed. This makes NIL a promising technique for volume manufacture of nanostructured components. At present, structures with feature sizes down to 5 nm have been realized, and the resolution is limited by the ability to manufacture the stamp relief. For historical reasons, the term nanoimprint lithography refers to a hot embossing process (thermal NIL). In ultraviolet (UV)-NIL, a photopolymerizable resin is used together with a UV-transparent stamp. In both processes thin-film squeeze flow and capillary action play a central role in understanding the NIL process. In this chapter we will give an overview of NIL, with emphasis on general principles and concepts rather than specific process issues and state-of-the-art tools and processes. Material aspects of stamps and resists are discussed. We discuss specific applications where imprint methods have significant advantages over other structuring methods. We conclude by discussing areas where further development in this field is required.

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Abbreviations

µCP:

microcontact printing

2-D:

two-dimensional

3-D:

three-dimensional

AFM:

atomic force microscope

AFM:

atomic force microscopy

BD:

blu-ray disc

CD:

compact disc

CD:

critical dimension

CMOS:

complementary metal–oxide–semiconductor

CVD:

chemical vapor deposition

CoO:

cost of ownership

DTR:

discrete track recording

DUV:

deep-ultraviolet

DVD:

digital versatile disc

EBL:

electron-beam lithography

EUV:

extreme ultraviolet

FDA:

Food and Drug Administration

HDD:

hard-disk drive

HDTV:

high-definition television

HEL:

hot embossing lithography

HF:

hydrofluoric

ITRS:

International Technology Roadmap for Semiconductors

JFIL:

jet-and-flash imprint lithography

LCoS:

liquid crystal on silicon

LED:

light-emitting diode

LFM:

lateral force microscope

LFM:

lateral force microscopy

LOR:

lift-off resist

MAPL:

molecular assembly patterning by lift-off

MEMS:

microelectromechanical system

MFM:

magnetic field microscopy

MFM:

magnetic force microscope

MFM:

magnetic force microscopy

MVD:

molecular vapor deposition

NGL:

next-generation lithography

OLED:

organic light-emitting device

PC:

polycarbonate

PCB:

printed circuit board

PCL:

polycaprolactone

PDMS:

polydimethylsiloxane

PL:

photolithography

PMMA:

poly(methyl methacrylate)

PS:

polystyrene

PTFE:

polytetrafluoroethylene

PhC:

photonic crystal

RIE:

reactive-ion etching

SAW:

surface acoustic wave

SFIL:

step and flash imprint lithography

SL:

soft lithography

SSIL:

step-and-stamp imprint lithography

UV:

ultraviolet

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Authors and Affiliations

  1. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232, Villigen PSI, Switzerland

    Helmut Schift

  2. DTU Nanotech, Technical University of Denmark, 2800, Kongens Lyngby, Denmark

    Anders Kristensen

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  1. Helmut Schift
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    Bharat Bhushan

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Schift, H., Kristensen, A. (2010). Nanoimprint Lithography – Patterning of Resists Using Molding. In: Bhushan, B. (eds) Springer Handbook of Nanotechnology. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02525-9_9

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