Abstract
This chapter outlines and discusses important micro- and nanofabrication techniques. We start with the most basic methods borrowed from the integrated circuit (IC) industry, such as thin-film deposition, lithography and etching, and then move on to look at microelectromechanical systems (MEMS) and nanofabrication technologies. We cover a broad range of dimensions, from the micron to the nanometer scale. Although most of the current research is geared towards the nanodomain, a good understanding of top-down methods for fabricating micron-sized objects can aid our understanding of this research. Due to space constraints, we focus here on the most important technologies; in the microdomain these include surface, bulk, and high-aspect-ratio micromachining; in the nanodomain we concentrate on e-beam lithography, epitaxial growth, template manufacturing, and self-assembly. MEMS technology is maturing rapidly, with some new technologies displacing older ones that have proven to be unsuited to manufacture on a commercial scale. However, the jury is still out on methods used in the nanodomain, although it appears that bottom-up methods are the most feasible, and these will have a major impact in a variety of application areas such as biology, medicine, environmental monitoring, and nanoelectronics.
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Abbreviations
- AFM:
-
atomic force microscope
- AFM:
-
atomic force microscopy
- ALD:
-
atomic layer deposition
- BHF:
-
buffered HF
- BiCMOS:
-
bipolar CMOS
- CMOS:
-
complementary metal–oxide–semiconductor
- CVD:
-
chemical vapor deposition
- DC:
-
direct-current
- DMD:
-
deformable mirror display
- DMD:
-
digital mirror device
- DNA:
-
deoxyribonucleic acid
- DPN:
-
dip-pen nanolithography
- DRIE:
-
deep reactive ion etching
- EDP:
-
ethylene diamine pyrochatechol
- EUV:
-
extreme ultraviolet
- HARPSS:
-
high-aspect-ratio combined poly- and single-crystal silicon
- HEXSIL:
-
hexagonal honeycomb polysilicon
- HMDS:
-
hexamethyldisilazane
- HOPG:
-
highly oriented pyrolytic graphite
- IC:
-
integrated circuit
- LIGA:
-
Lithographie Galvanoformung Abformung
- LPCVD:
-
low-pressure chemical vapor deposition
- LTO:
-
low-temperature oxide
- MBE:
-
molecular-beam epitaxy
- MEMS:
-
microelectromechanical system
- MOCVD:
-
metalorganic chemical vapor deposition
- OTS:
-
octadecyltrichlorosilane
- PDMS:
-
polydimethylsiloxane
- PECVD:
-
plasma-enhanced chemical vapor deposition
- PLD:
-
pulsed laser deposition
- PMMA:
-
poly(methyl methacrylate)
- PSG:
-
phosphosilicate glass
- PZT:
-
lead zirconate titanate
- RCA:
-
Radio Corporation of America
- RF:
-
radiofrequency
- RHEED:
-
reflection high-energy electron diffraction
- RIE:
-
reactive-ion etching
- SAM:
-
scanning acoustic microscopy
- SAM:
-
self-assembled monolayer
- SCREAM:
-
single-crystal reactive etching and metallization
- SEM:
-
scanning electron microscope
- SEM:
-
scanning electron microscopy
- SLIGA:
-
sacrificial LIGA
- SOI:
-
silicon-on-insulator
- SPM:
-
scanning probe microscope
- SPM:
-
scanning probe microscopy
- STM:
-
scanning tunneling microscope
- STM:
-
scanning tunneling microscopy
- SoS:
-
silicon-on-sapphire
- TASA:
-
template-assisted self-assembly
- TEM:
-
transmission electron microscope
- TEM:
-
transmission electron microscopy
- TI:
-
Texas Instruments
- TMAH:
-
tetramethyl ammonium hydroxide
- UV:
-
ultraviolet
- VLSI:
-
very large-scale integration
- VPE:
-
vapor-phase epitaxy
- fcc:
-
face-centered cubic
- hcp:
-
hexagonal close-packed
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Ziaie, B., Baldi, A., Atashbar, M.Z. (2010). Introduction to Micro-/Nanofabrication. In: Bhushan, B. (eds) Springer Handbook of Nanotechnology. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-02525-9_8
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