Abstract
SiGe alloys allow the integration of infrared detectors on Si. The addition of Ge to Si also increases the absorption coefficient in the spectral range from 400 to 1,000 nm, allows a reduction of the detector thickness, and, therefore, enables faster detectors than with pure Si. To exploit the advantages of SiGe alloys for Si-based photodetectors, however, the problems associated with the lattice constant mismatch and energy band discontinuities have to be understood. This chapter gives an overview of these aspects and describes many examples of SiGe photodetectors.
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© 2009 Springer-Verlag Berlin Heidelberg
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Zimmermann, H. (2009). SiGe Photodetectors. In: Integrated Silicon Optoelectronics. Springer Series in Optical Sciences, vol 148. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-01521-2_6
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DOI: https://doi.org/10.1007/978-3-642-01521-2_6
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Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-01520-5
Online ISBN: 978-3-642-01521-2
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