Abstract
After the collection of the most important optical and optoelectronic definitions in the last chapter, we will now summarize the fundamentals of device physics and modeling of solid-state electron devices including photodetectors in a compact form. For a detailed description of the principles of photodetectors, the book [1] is recommended. A detailed review on modeling of solid-state electron devices can be found in [4]. Here, the semiconductor equations with implemented photogeneration and the models for carrier mobility used in device simulators will be listed first. Carrier drift and diffusion as well as their consequences for the speed and the quantum efficiency of photodetectors will be explained. Furthermore, the equivalent circuit of a photodiode will be discussed in order to show further aspects concerning the speed of photoreceivers.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2009 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Zimmermann, H. (2009). Theory. In: Integrated Silicon Optoelectronics. Springer Series in Optical Sciences, vol 148. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-01521-2_2
Download citation
DOI: https://doi.org/10.1007/978-3-642-01521-2_2
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-01520-5
Online ISBN: 978-3-642-01521-2
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)