Abstract
Ellipsometry, transmission electron microscopy(TEM) and step-profile measurement were used to study the dry oxidation kinetics of silicon at temperatures from 800 to 1100°C. For oxide films thicker than 800 Å, all three thickness measurements agreed within experimental error. For oxide films thinner than 350 Å, the ellipsometry gave higher thickness values than the TEM measurements. Thickness measurements by TEM below 500 Â were combined with measurements on thicker films by all three measurements and fitted a linear-parabolic relationship throughout the measured thickness range. Previous deviations from linear-parabolic behavior resulted from inaccurate thickness measurements by ellipsometry for film thinner than 300 Å. The oxidation kinetics are modeled as resulting from the diffusion of molecular oxygen through two different films, the main film of silicon dioxide and a thin interfacial film in which oxygen diffuses more slowly. If this film has constant thickness, a linear term reults; the parabolic term for the growth of the main film is reduced because of compressive film stress.
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© 1993 Springer Science+Business Media New York
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Kao, S.C., Doremus, R.H. (1993). Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_4
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_4
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