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Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode

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Abstract

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15° angle cap.

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References

  1. Stringfellow, G. B., Craford, m. G., High Brightness Light Emitting Diodes, New York: Academic Press, 1988.

    Google Scholar 

  2. Sugawara, H., Ishikawa, M., Hatakoshi, G., High-efficiency InGaAlP/GaAs visible light-emitting diodes, Appl. Phys. Lett., 1991, 58(10): 1010–1012.

    Article  Google Scholar 

  3. Lin, J.-F., Wu, M.-C. et al., Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes, Electronics Letters, 1994, 30(21): 1793–1794.

    Article  Google Scholar 

  4. Huang, K. H., Yu, J. G., Kuo, C. P. et al., Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer. Appl. Phys. Lett. 1992, 61(9): 1045–1047.

    Article  Google Scholar 

  5. Guo Xia, Shen Guang-Di, Wang Guo-Hong et al., Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency, Appl. Phys. Lett., 2001, 79 (18): 2985–2986.

    Article  Google Scholar 

  6. Shen Guang-di, Lian Peng, Guo Xia, et al., High power coupled large cavity lasers and multi-active light emitting diodes APOC 2001, SPIE, 2001, 4580: 19–25.

    Article  Google Scholar 

  7. Casey, H. Jr., Panish, M. B., Heterostructure Lasers, New York: Academic, 1978.

    Google Scholar 

  8. Scott, J. W., Geells, R. S., Scott, W. et al. Modeling temperature effects and spatial hole burning to optimize vertical- cavity surface-emitting laser performance. IEEE Journal of Quantum Electronics, 1993, 29(5): 1295–1308.

    Article  Google Scholar 

  9. Chi, G. C., Su, Y. K., Jou, M. J., et al., Window layer for current spreading in InGaAlP light-emitting diode. J. Appl. Phy’s., 1994, 76 (5): 1–3.

    Google Scholar 

  10. Kish, F. A., Steraka, F. M., DeFevere, D. C. et al., Very high-efficiency semiconductor wafer-bonged transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes, Appl. Phys. Lett., 1994, 64(21): 2839–2841

    Article  Google Scholar 

  11. Krames, M. R., Ochiai-Holcomb, M., Hofler, G. E. et al., High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency, Appl. Phys. Lett., 1999, 75(16), 2365–2367.

    Article  Google Scholar 

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Authors and Affiliations

  1. Institute of Electronic Engineering and Information, Beijing University of Technology & Beijing Optoelectronic Technology Laboratory, 100022, Beijing, China

    Guo Xia, Shen Guangdi, Wang Guohong, Wang Xuezhong, Du Jinyu & Gao Guo

  2. Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, 90095-1594, Los Angeles, California, USA

    Kang L. Wang

Authors
  1. Guo Xia
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  2. Shen Guangdi
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  3. Wang Guohong
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  4. Wang Xuezhong
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  5. Du Jinyu
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  6. Gao Guo
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  7. Kang L. Wang
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Corresponding author

Correspondence to Guo Xia.

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Guo, X., Shen, G., Wang, G. et al. Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode. Sci. China Ser. E-Technol. Sci. 46, 204–208 (2003). https://doi.org/10.1360/03ye9022

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  • DOI: https://doi.org/10.1360/03ye9022

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