Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode

  • Guo Xia 
  • Shen Guangdi 
  • Wang Guohong 
  • Wang Xuezhong 
  • Du Jinyu 
  • Gao Guo 
  • Kang L. Wang
Article

DOI: 10.1360/03ye9022

Cite this article as:
Guo, X., Shen, G., Wang, G. et al. Sci. China Ser. E-Technol. Sci. (2003) 46: 204. doi:10.1360/03ye9022
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Abstract

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15° angle cap.

Keywords

high-brightness AlGaInP light-emitting diodes 

Copyright information

© Science in China Press 2003

Authors and Affiliations

  • Guo Xia 
    • 1
  • Shen Guangdi 
    • 1
  • Wang Guohong 
    • 1
  • Wang Xuezhong 
    • 1
  • Du Jinyu 
    • 1
  • Gao Guo 
    • 1
  • Kang L. Wang
    • 2
  1. 1.Institute of Electronic Engineering and InformationBeijing University of Technology & Beijing Optoelectronic Technology LaboratoryBeijingChina
  2. 2.Device Research Laboratory, Department of Electrical EngineeringUniversity of California at Los AngelesLos AngelesUSA

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