Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode
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- Guo, X., Shen, G., Wang, G. et al. Sci. China Ser. E-Technol. Sci. (2003) 46: 204. doi:10.1360/03ye9022
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In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15° angle cap.