Abstract
A wideband current-mirror mixer in a \(0.18\hbox {-}\upmu \hbox {m}\) CMOS process is presented in this paper for multistandard applications. A current-reuse technique is employed in the transconductance stage by utilizing a current bleeding PFET. The transconductance stage is well designed so that the NFET-induced second-order distortion is canceled by the PFET, and a high IIP2 is achieved. An NFET switching stage is employed in the proposed mixer to reduce the low supply voltage. The working mechanism of the voltage-mode passive switch is firstly analyzed. The measurement results show that the minimum and maximum measured conversion gain are 17.52 and 19.43 dB across the frequency band of 10 MHz to 2 GHz. High IIP2 of 69.3 and 67.13 dBm are measured at 50 and 500 MHz, respectively. The mixer has a moderate noise figure of 11.1 dB and an IIP3 of –0.9 dBm. A good LO-to-RF isolation is achieved across the entire frequency band. The whole mixer has a compact layout which is only \(0.071\,\hbox {mm}^{2}\). The total power consumption is 4.6 mW with a supply voltage of 1 V.
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This work is partially supported by the National Natural Science Foundation of China (No.61306069).
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Ma, L., Wang, Z. & Xu, J. A 1-V Current-Reused Wideband Current-Mirror Mixer in 180-nm CMOS with High IIP2. Circuits Syst Signal Process 36, 1806–1817 (2017). https://doi.org/10.1007/s00034-016-0396-2
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DOI: https://doi.org/10.1007/s00034-016-0396-2